Synthesis and use of precursors for ALD of tellurium and selenium thin films
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United States of America Patent
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-
Oct 10, 2017
Issued Date -
N/A
app pub date -
Oct 13, 2015
filing date -
Apr 25, 2008
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
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International Classification(s)
- 2015 Application Filing Year
- C23C Class
- 3009 Applications Filed
- 2118 Patents Issued To-Date
- 70.39 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- C23C Class
- 27.20 % this patent is cited more than
- 8 Age
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