MEMS isolation structures

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9783413
APP PUB NO 20160272485A1
SERIAL NO

15166019

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Abstract

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A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

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Patent Owner(s)

Patent OwnerAddress
DIGITALOPTICS CORPORATION MEMSSAN JOSE CA 95134

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calvet, Robert J Pasadena, US 66 1471
Gutierrez, Roman C Arcadia, US 136 2575
Jain, Ankur Cerritos, US 146 2236
Lee, Shi-Sheng Arcadia, US 7 57
Liu, Xiaolei South Pasadena, US 115 570

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