Wafer-level semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 9780276
SERIAL NO

15111675

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Abstract

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The present invention discloses a wafer-level semiconductor device and a manufacturing method thereof. The wafer-level semiconductor device comprises a wafer-level substrate; a plurality of serial groups formed on a surface of the substrate and are disposed in parallel, each serial group comprising a plurality of parallel groups disposed in series, each parallel groups comprising a plurality of unit cells disposed in parallel, wherein each unit cell is an independent functional unit which is formed by processing a semiconductor layer directly grown on a surface of the substrate; and a lead, which is at least electrically connected between two selected parallel groups in each serial group to make ON-voltages of all the serial groups substantially consistent. The device of the present invention, with a simple structure, a simple and convenient manufacturing process, and a high efficiency to produce qualified products, can be put into large-scale production and application.

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Patent Owner(s)

Patent OwnerAddress
SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO) CHINESE ACADEMY OF SCIENCES215123 JIANGSU CITY INDUSTRIAL PARK SUZHOU 398 SUZHOU CITY JIANGSU PROVINCE 215123

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Yong Jiangsu, CN 65 422
Xu, Fei Jiangsu, CN 183 870
Zhang, Yibin Jiangsu, CN 14 25

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