Integrated circuits and devices with interleaved transistor elements, and methods of their fabrication
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United States of America Patent
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Oct 3, 2017
Issued Date -
N/A
app pub date -
Oct 19, 2015
filing date -
Oct 19, 2015
priority date (Note) -
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Abstract
A monolithic integrated circuit includes first and second pluralities of parallel-connected transistor elements (e.g., transistor fingers). To spread heat in the IC, the first and second pluralities of transistor elements are interleaved with each other and arranged in a first row. The IC also may include third and fourth pluralities of parallel-connected transistor elements arranged in a second row. The transistor elements in the first row may be series and shunt transistors of an RF switch transmit path, and the transistor elements in the second row may be series and shunt transistors of an RF switch receive path. During a transmit mode of operation, the series transistors in the transmit path and the shunt transistors in the receive path are closed. During a receive mode of operation, the shunt transistors in the transmit path and the series transistors in the receive path are closed.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- NXP USA, INC.
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- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Danaher, Frank E | Gilbert, US | 3 | 20 |
Fender, Jason R | Chandler, US | 11 | 95 |
Fraser, Michael L | Tempe, US | 8 | 78 |
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