Substrate treating apparatus and method
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United States of America Patent
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Oct 3, 2017
Grant Date -
Jul 2, 2015
app pub date -
Nov 17, 2014
filing date -
Dec 26, 2013
priority date (Note) -
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Abstract
Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.
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