Method for preparing halftone phase shift photomask blank
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United States of America Patent
Stats
-
Oct 3, 2017
Grant Date -
Oct 6, 2016
app pub date -
Mar 23, 2016
filing date -
Mar 31, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A halftone phase shift film containing Si and N and/or O is deposited on a transparent substrate by reactive sputtering of a Si-containing target with a reactive gas containing N and/or O. One layer is sputter deposited while the reactive gas flow rate is set equal to or lower than the lower limit of the reactive gas flow rate in the hysteresis region, and another layer is sputter deposited while the reactive gas flow rate is set inside the lower and upper limits of the reactive gas flow rate in the hysteresis region. The phase shift film exhibits satisfactory in-plane uniformity of optical properties.
First Claim
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International Classification(s)
- 2016 Application Filing Year
- C23C Class
- 3247 Applications Filed
- 2111 Patents Issued To-Date
- 65.02 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- C23C Class
- 27.20 % this patent is cited more than
- 8 Age
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