Si-containing film forming precursors and methods of using the same
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United States of America Patent
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Oct 3, 2017
Grant Date -
Dec 31, 2015
app pub date -
Jun 12, 2015
filing date -
Mar 30, 2015
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Abstract
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
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