Infrared detector system and method
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United States of America Patent
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Sep 26, 2017
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app pub date -
Jul 18, 2012
filing date -
May 18, 2011
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Abstract
An infrared detector system is described which includes a detector diode array 3 and a non volatile memory 1. The non volatile memory 1 can use CMOS Silicon Fuse technology which can be polysilicon devices that are programmed using voltage-current-time profiles suitable for the silicon process technology, such that when applied will cause the polysilicon element to heat up rapidly and melt. This results in the fuse element going open circuit, just like blowing a known fuse. The fuse can act as a logic element that has a one time, user programmable and permanent logic state. An array of such memory cells is can be mapped to a sub pixel diode detector array.
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