Thin film transistor and manufacturing method thereof, display substrate and display device

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United States of America Patent

PATENT NO 9773917
SERIAL NO

14651376

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Abstract

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A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.

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Patent Owner(s)

Patent OwnerAddress
BOE TECHNOLOGY GROUP CO LTD100015 NO 10 JIUXIANQIAO ROAD BEIJING CHAOYANG DISTRICT BEIJING CITY BEIJING CITY 100015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jiangbo Beijing, CN 57 85
Wang, Dongfang Beijing, CN 169 580

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