Semiconductor device, memory device, electronic device, or method for driving the semiconductor device

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United States of America Patent

PATENT NO 9773787
APP PUB NO 20170125420A1
SERIAL NO

15338610

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Abstract

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A semiconductor device with an improved arithmetic processing speed and a decreased circuit size, and its driving method are provided. In the semiconductor device, a first terminal of a first transistor and a gate of a second transistor are electrically connected to a first terminal of a capacitor, and a control circuit is electrically connected to a second terminal of the capacitor. The control circuit supplies a first potential to the second terminal of the capacitor, in other words, adds a value corresponding to the first potential to the value of first data previously retained in the gate of the second transistor in order to obtain second data. In the second transistor, the second data, specifically, a third potential commensurate with the potential of the gate will be output from a second terminal when a second potential is supplied to a first terminal.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDATSUGI-SHI KANAGAWA-KEN 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuzaki, Takanori Kanagawa, JP 163 1834

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