Method of etching semiconductor structures with etch gas
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United States of America Patent
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Sep 26, 2017
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app pub date -
Sep 9, 2014
filing date -
Sep 9, 2013
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Abstract
Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
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