MgO target for sputtering
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United States of America Patent
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Sep 26, 2017
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N/A
app pub date -
Jun 29, 2012
filing date -
Jul 1, 2011
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Abstract
Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.
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