Plasma ion source and charged particle beam apparatus

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United States of America Patent

PATENT NO 9773637
APP PUB NO 20160240346A1
SERIAL NO

15019987

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Abstract

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A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.

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  • HITACHI HIGH-TECHNOLOGIES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oba, Hiroshi Tokyo, JP 30 94
Okabe, Mamoru Tokyo, JP 12 56
Sugiyama, Yasuhiko Tokyo, JP 50 243

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges6221535185612511122323201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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