Mask alignment mark, photomask, exposure apparatus, exposure method, and manufacturing method of device
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United States of America Patent
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Sep 26, 2017
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app pub date -
Sep 4, 2015
filing date -
Jun 30, 2015
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Abstract
According to one embodiment, there is provided a mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system. The mask alignment mark including a plurality of patterns arranged in a predetermined direction at a pitch of substantially P=λ/{2×(1−σ)×(LNA)}, where σ is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and λ is a wavelength of light.
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