Semiconductor integrated circuit and method for manufacturing the same
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United States of America Patent
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Sep 26, 2017
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Oct 1, 2014
filing date -
Oct 2, 2013
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Abstract
A semiconductor integrated circuit that reduces a loss in an electrical signal and a method for manufacturing the semiconductor integrated circuit are provided. The semiconductor integrated circuit comprises a first region on which an optical circuit is to be formed and a second region on which an electrical signal wiring is to be formed. The first region comprises an Si substrate (502), a BOX layer (504) formed on the Si substrate (502), a first SOI layer (506) formed as an optical circuit on the BOX layer (504), and a first SiO2 layer (508) formed on the first SOI layer (506). The second region comprises the Si substrate (502), the BOX layer (504), a second SiO2 layer (508) formed on the BOX layer (504), and an electrical signal wiring (510) formed on the second SiO2 layer (508).
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