Process for forming graphene layers on silicon carbide
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 26, 2017
Grant Date -
Aug 11, 2016
app pub date -
Sep 8, 2014
filing date -
Sep 16, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully