Current accumulative pixel structure for CMOS-TDI image sensor

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United States of America Patent

PATENT NO 9769407
SERIAL NO

14916565

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Abstract

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The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.

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  • TIANJIN UNIVERSITY

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  • 2014 Application Filing Year
  • H04N Class
  • 15592 Applications Filed
  • 13519 Patents Issued To-Date
  • 86.71 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gao, Jing Tianjin, CN 158 900
Gao, Zhiyuan Tianjin, CN 7 8
Nie, Kaiming Tianjin, CN 4 15
Shi, Zaifeng Tianjin, CN 7 25
Xu, Jiangtao Tianjin, CN 14 42
Yao, Suying Tianjin, CN 4 18

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  • 1 Citation Count
  • H04N Class
  • 18.14 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1278443673927813173402313772001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +02505007501000125015001750200022502500275030003250350037504000425045004750

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