Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof
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United States of America Patent
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Sep 19, 2017
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Apr 14, 2016
app pub date -
Jul 13, 2015
filing date -
Oct 14, 2014
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Abstract
The present invention relates to a resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereof. Especially, the present invention provides a technique forming a bottom electrode having an upwardly protruding tapered tip structure through etching a semiconductor substrate in order that an electric field is focused on the tip of the bottom electrode across a top electrode and that a region where conductive filaments are formed is maximally minimized or localized.
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