Etching techniques for semiconductor devices
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United States of America Patent
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Sep 19, 2017
Grant Date -
Dec 29, 2016
app pub date -
Jun 25, 2015
filing date -
Jun 25, 2015
priority date (Note) -
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Abstract
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.
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