Source line formation and structure
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United States of America Patent
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Sep 19, 2017
Issued Date -
N/A
app pub date -
May 15, 2015
filing date -
May 15, 2015
priority date (Note) -
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Abstract
An initial etch forms a trench over first contact areas of a plurality of NAND strings, the initial etch also forming individual openings over second contact areas of the plurality of NAND strings. Material is added in the trench to reduce an area of exposed bottom surface of the trench while maintaining the individual openings without substantial reduction of bottom surface area. Subsequent further etching extends the trench and the plurality of individual openings.
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