Transistor structure and fabrication methods with an epitaxial layer over multiple halo implants
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United States of America Patent
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Sep 19, 2017
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Mar 28, 2016
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Sep 24, 2013
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Abstract
A method of forming a transistor can include forming a gate mask on a substrate having a vertical location aligned with that of a transistor control gate; implanting first conductivity type dopants with the gate mask as an implant mask to form a first shallow halo region; implanting first conductivity type dopants with at least the gate mask as an implant mask to form a first deep halo region having a peak dopant concentration profile at a greater substrate depth than the first shallow halo region; forming an epitaxial layer on top of the substrate; forming a first control gate structure on the epitaxial layer; and forming a first source or drain region, of a second conductivity type, in at least the epitaxial layer to a side of the first control gate, and over the first shallow halo region and the first deep halo region.
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