Isolation regions for SOI devices
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United States of America Patent
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Sep 19, 2017
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app pub date -
Aug 21, 2012
filing date -
Aug 21, 2012
priority date (Note) -
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Abstract
An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion of the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.
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