Semiconductor device having variable parameter selection based on temperature and test method

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United States of America Patent

PATENT NO 9766135
SERIAL NO

13490890

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Abstract

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A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONCS CO LTD129 SAMSUNG-RO YEONGTONG-GU GYEONGGI-DO SUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Walker, Darryl G San Jose, US 85 504

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