Method for fabricating a shield gate trench MOSFET
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United States of America Patent
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Sep 12, 2017
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N/A
app pub date -
Nov 29, 2016
filing date -
May 31, 2016
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Abstract
A method for fabricating a shield gate trench MOSFET, including the following steps: forming a hard mask layer and defining a gate forming region; forming a top trench by means of both anisotropic and isotropic etching; forming an oxidative barrier layer; etching back the oxidative barrier layer, and then forming a bottom trench by means of anisotropic etching; forming a bottom oxidative layer by means of thermal oxidative self-alignment; removing the oxidative barrier layer; forming a gate dielectric film; forming a first polysilicon layer; etching back the first polysilicon layer to form respectively therefrom a polysilicon gate and a bottom shield polysilicon; forming a inter-poly dielectric isolation layer; etching back the inter-poly dielectric isolation layer; forming a second polysilicon layer and forming a shield polysilicon by means of superposition with the bottom shield polysilicon.
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