Engineered substrates for use in crystalline-nitride based devices
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United States of America Patent
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Sep 12, 2017
Grant Date -
Jul 2, 2015
app pub date -
Dec 30, 2014
filing date -
Dec 30, 2013
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Abstract
A spalling process can be employed to generate a fracture at a predetermined depth within a high quality crystalline nitride substrate, such as a bulk GaN substrate. A first crystalline conductive film layer can be separated, along the line of fracture, from the crystalline nitride substrate and subsequently bonded to a layered stack including a traditional lower-cost substrate. If the spalled surface of the first crystalline conductive film layer is exposed in the resulting structure, the structure can act as a substrate on which high quality GaN-based devices can be grown.
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