Indium cylindrical sputtering target and manufacturing method thereof
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United States of America Patent
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Sep 12, 2017
Grant Date -
Oct 22, 2015
app pub date -
Jan 31, 2013
filing date -
Aug 22, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.
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International Classification(s)
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- B21J:FORGING; HAMMERING; PRESSING; RIVETING; FORGE FURN....
- C22F:CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS MET....
- B21C:MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PR....
- B21B:ROLLING OF METAL
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