Diffusion bonded high purity copper sputtering target assemblies
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United States of America Patent
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Sep 12, 2017
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Jun 18, 2015
app pub date -
Dec 13, 2013
filing date -
Dec 13, 2013
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Abstract
The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.
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