On/off ratio for nonvolatile memory device and method
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United States of America Patent
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Sep 5, 2017
Grant Date -
Nov 27, 2014
app pub date -
Aug 8, 2014
filing date -
Jul 13, 2010
priority date (Note) -
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Abstract
A switching device includes a first dielectric material formed overlying a substrate. A bottom wiring material and a switching material are sequentially formed overlying the first dielectric material. The bottom wiring material and the switching material are patterned and etched to form a first structure having a top surface region and a side region. The first structure includes a bottom wiring structure and a switching element having the top surface region including an exposed region. A second dielectric material is formed overlying the first structure. A first opening region is formed in a portion of the second dielectric layer to expose a portion of the top surface region. A dielectric side wall structure is formed overlying a side region of the first opening region. A top wiring material including a conductive material is formed overlying the top surface region to be directly contact with the switching element.
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