Semiconductor device and radio frequency module formed on high resistivity substrate
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United States of America Patent
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Sep 5, 2017
Grant Date -
Dec 22, 2016
app pub date -
Feb 11, 2016
filing date -
Jun 18, 2015
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Abstract
In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.
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