Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers
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United States of America Patent
Stats
-
Sep 5, 2017
Grant Date -
Aug 25, 2016
app pub date -
May 4, 2016
filing date -
Nov 23, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 8 Age
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