Plasmonic nano-lithography based on attenuated total reflection
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United States of America Patent
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Sep 5, 2017
Grant Date -
Dec 3, 2015
app pub date -
Sep 3, 2012
filing date -
Sep 3, 2012
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Abstract
Techniques related to semiconductor fabrication are generally described herein. An example fabrication method may include coupling, by a lithographic equipment, a surface of a planar waveguide structure with a first surface of a photolithographic mask. Some example methods may also include directing, by the lithographic equipment, a lithography light beam into the planar waveguide structure, causing a surface plasmon being emitted from the surface of the planar waveguide structure when the lithography light beam is reflected by internal surfaces of the planar waveguide structure, effectuating an attenuated total reflection. Some example methods may further include directing, by the lithographic equipment, an evanescent wave caused by the surface plasmon through the photolithographic mask, wherein the evanescent wave has a sub-diffraction characteristic and is used as a photolithographic light source.
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| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| WO | A1 | WO2014032304 | Sep 03, 2012 |
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