Method of fabrication of Al/Ge bonding in a wafer packaging environment and a product produced therefrom
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United States of America Patent
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Sep 5, 2017
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N/A
app pub date -
Nov 30, 2016
filing date -
Mar 18, 2005
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Abstract
A method of bonding of germanium to aluminum between two substrates to create a robust electrical and mechanical contact is disclosed. An aluminum-germanium bond has the following unique combination of attributes: (1) it can form a hermetic seal; (2) it can be used to create an electrically conductive path between two substrates; (3) it can be patterned so that this conduction path is localized; (4) the bond can be made with the aluminum that is available as standard foundry CMOS process. This has the significant advantage of allowing for wafer-level bonding or packaging without the addition of any additional process layers to the CMOS wafer.
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