Gate drive circuit for power conversion apparatus
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United States of America Patent
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Aug 29, 2017
Issued Date -
N/A
app pub date -
Oct 6, 2016
filing date -
Jul 21, 2016
priority date (Note) -
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Abstract
An apparatus includes a gate drive circuit and a GaN HEMT switch where the gate drive circuit has a gate drive output to produce a gate drive signal in response to a gate control signal. The switch has a gate connected to the gate drive circuit through a gate drive resistor. The gate drive circuit includes a NPN (or NMOS) turn-on transistor and a PNP (or PMOS) turn-off transistor. The gate drive circuit includes a turn-on resistor with a first resistance coupled to the turn-on transistor and a turn-off resistor with a second resistance coupled to the turn-off transistor. The turn-on and turn-off transistors, gate drive resistor, the switching device, but not the turn-on and turn-off resistors are disposed in an integrated circuit to reduce a gate-drive loop inductance. The first and second resistances can be different to adjust the turn-on and turn-off speeds of the switching device.
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