Dry etching method of manufacturing semiconductor light emitting device substrate
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United States of America Patent
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Aug 29, 2017
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app pub date -
Mar 15, 2016
filing date -
Aug 21, 2012
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Abstract
A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.
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