Transistor

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United States of America Patent

PATENT NO 9748383
SERIAL NO

12867257

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Abstract

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A Metal Oxide Semiconductor (MOS) transistor comprising: a source; a gate; and a drain, the source, gate and drain being located in or on a well structure of a first doping polarity located in or on a substrate; wherein at least one of the source and the drain comprises a first structure comprising: a first region forming a first drift region, the first region being of a second doping polarity opposite the first doping polarity; a second region of the second doping polarity in or on the first region, the second region being a well region and having a doping concentration which is higher than the doping concentration of the first region; and a third region of the second doping polarity in or on the second region. Due to the presence of the second region the transistor may have a lower ON resistance when compared with a similar transistor which does not have the second region. The breakdown voltage may be influenced only to a small extent.

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Patent Owner(s)

Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES GMBHHAARBERGSTR 67 ERFURT 99097

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hu, Yong Hai Singapore, SG 1 13
Kee, Kia Yaw Kuching, MY 6 21
Kho, Elizabeth Ching Tee Kuching, MY 2 21
Lau, William Kuching, MY 33 1555
Liu, Jian Shanghai, CN 667 5710
Liu, Zheng Chao Shanghai, CN 1 13
Pal, Deb Kumar Kolkata, IN 9 29
Tiong, Michael Mee Gouh Kuching, MY 1 13

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