Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 29, 2017
Grant Date -
Jan 12, 2017
app pub date -
Jul 6, 2016
filing date -
Jul 8, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×108 pieces/cm2 or more and 1×1011 pieces/cm2 or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully