Method of fabricating multi-wafer image sensor

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United States of America Patent

PATENT NO 9748308
SERIAL NO

15166002

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Abstract

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A method of fabricating an image system includes forming a first wafer that includes a first semiconductor substrate and a first interconnect layer. A pixel array is formed in an imaging region of the first semiconductor substrate and a first insulation-filled trench is formed in a peripheral circuit region of the first semiconductor substrate. Additionally, a second wafer is formed that includes a second semiconductor substrate and a second interconnect layer. A second insulation-filled trench is formed in a second semiconductor substrate, and the first wafer is bonded to the second wafer. A third interconnect layer of a third wafer is bonded to the second wafer. At least one deep via cavity is formed through the first and second interconnect layers and through the first and second insulation-filled trenches. The at least one deep via cavity is filled with a conductive material to form a deep via.

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Patent Owner(s)

Patent OwnerAddress
OMNIVISION TECHNOLOGIES INCCALIFORNIA USA CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Jin San Jose, US 561 11650
Lu, Chen-Wei San Jose, US 45 278
Qian, Yin Milpitas, US 133 1575
Rhodes, Howard E Nokomis, US 413 9099
Tai, Dyson H San Jose, US 68 503

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