Importance

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Abstract

The present invention discloses a thin film transistor, comprising a gate electrode (2), a gate insulating layer (3), and active layer (4), and etching barrier layer (7), a source electrode and a drain electrode, wherein the source electrode comprises a first source electrode (5) and a second source electrode (8) electrically connected therewith, the drain electrode comprises a first drain electrode (6) and a second drain electrode (9) electrically connected therewith, the first source electrode and first drain electrode are formed on the active layer, the etching barrier layer at least covers a portion of the active layer between the first source electrode and the first drain electrode, and respectively covers portions of the first source electrode (5) and the first drain electrode (6) adjacent to each other, and the second source electrode and the second drain electrode are formed on the etching barrier layer. The present invention further discloses a method of manufacturing a thin film transistor, an array substrate and a display device both comprising the thin film transistor. The thin film transistor formed according to the present invention has a short channel length, which increases an on-state current of the thin film transistor while improving ohmic contact between the source and drain electrodes and the active layer, thereby increasing the stability of the thin film transistor.

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First Claim