Gate-bounded silicon controlled rectifier
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United States of America Patent
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Aug 29, 2017
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app pub date -
Jan 4, 2017
filing date -
Aug 31, 2016
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Abstract
A gate-bounded silicon controlled rectifier includes a substrate, an N-type well region, a P-type well region, a first N-type semiconductor region, a first P-type semiconductor region, a second N-type semiconductor region, a second P-type semiconductor region and a third semiconductor region. The N-type well region and the P-type well region are disposed in the substrate. The first N-type semiconductor region is disposed in the N-type well region. The first P-type semiconductor region is disposed in the P-type well region. The second N-type semiconductor region is disposed in the P-type well region and located between the first N-type semiconductor region and the first P-type semiconductor region. The second P-type semiconductor region is disposed in the N-type well region and located between the first N-type semiconductor region and the first P-type semiconductor region. The third semiconductor region is located between the second N-type semiconductor region and the second P-type semiconductor region.
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