Method of fabricating wafer

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United States of America Patent

PATENT NO 9745667
SERIAL NO

14128855

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Abstract

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A method of fabricating a wafer according to the embodiment comprises the steps of growing an wafer on a surface of the wafer in a growth temperature; and cooling the wafer after the wafer has been grown, wherein a stepwise cooling is performed when cooling the wafer.

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Patent Owner(s)

Patent OwnerAddress
LX SEMICON CO LTD222 TECHNO 2-RO YUSEONG-GU DAEJEON 34027 34027

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Seok Min Seoul, KR 21 56
Kim, Moo Seong Seoul, KR 25 12

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