CMOS compatible rare-earth-doped waveguide amplifier
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United States of America Patent
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Aug 22, 2017
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app pub date -
Dec 23, 2016
filing date -
Sep 22, 2016
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Abstract
The present application is directed to a planar waveguide amplifier. The planar waveguide amplifier includes a substrate having an upper surface and a lower surface. The planar waveguide amplifier includes a core formed on an upper surface of the substrate. The core includes a channel configured to transmit light there through. The planar waveguide amplifier also includes an upper cladding layer formed above the core. The upper cladding layer includes a glass doped with rare earth material in an amount less than about 5% of the upper cladding layer. The application is also directed to a method of amplifying a signal.
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