Nano-scale superconducting quantum interference device and manufacturing method thereof

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United States of America Patent

PATENT NO 9741919
SERIAL NO

15124668

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Abstract

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A nano-scale superconducting quantum interference device and a manufacturing method thereof, comprising the following steps of: S1: providing a substrate and growing a first superconducting material layer thereon; S2: forming a photo-resist layer and performing patterning; S3: etching the first superconducting material layer in a predetermined region; S4: covering a layer of insulation material on a top and a side of a structure obtained in step S3; S5: growing a second superconducting material layer; S6: removing the structure above the plane where the upper surface of the first superconducting material layer locates, to obtain a plane superconducting structure, in the middle of which at least one insulating interlayer is inserted; S7: forming at least one nanowire vertical to the insulating interlayer, to obtain the nano-scale superconducting quantum interference device. The width of the superconducting ring and the length of the nano junction are determined by the insulating interlayer.

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Patent Owner(s)

  • SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES;SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Lei Shanghai, CN 979 4055
Wang, Zhen Shanghai, CN 578 1891

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