Semiconductor light emitting device
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United States of America Patent
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Aug 22, 2017
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N/A
app pub date -
Jun 7, 2016
filing date -
Nov 12, 2015
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Abstract
A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InxGa1-xN, where 0
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