Semiconductor light-emitting device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 22, 2017
Grant Date -
May 11, 2017
app pub date -
Jun 6, 2016
filing date -
Nov 10, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is AlxInyGa1-x-yN, and 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully