Removal of 3D semiconductor structures by dry etching
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United States of America Patent
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Aug 22, 2017
Issued Date -
Sep 8, 2016
app pub date -
May 19, 2016
filing date -
Jun 18, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.
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