Bidirectional insulated gate bipolar transistor

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United States of America Patent

PATENT NO 9741837
APP PUB NO 20160322483A1
SERIAL NO

15209745

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Abstract

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A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA611731 NO 2006 WEST AVENUE CHENGDU HI TECH ZONE (WEST DISTRICT SICHUAN) CHENGDU CITY SICHUAN PROVINCE 611731
INSTITUTE OF ELECTRONIC AND INFORMATION ENGINEERING IN DONGGUAN UESTC523808 NO TWO NO 17 SONGSHAN LAKE SCIENCE AND TECHNOLOGY INDUSTRIAL PARK GUANGDONG DONGGUAN DONGGUAN CITY GUANGDONG PROVINCE 523808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Zehong Chengdu, CN 13 12
Liu, Jingxiu Chengdu, CN 11 187
Ren, Min Chengdu, CN 72 267
Shan, Yadong Chengdu, CN 1 2
Xu, Gaochao Chengdu, CN 3 2
Yao, Xin Chengdu, CN 83 278
Zhang, Bo Chengdu, CN 1006 7322
Zhang, Jinping Chengdu, CN 39 222

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