Bidirectional insulated gate bipolar transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 22, 2017
Grant Date -
Nov 3, 2016
app pub date -
Jul 13, 2016
filing date -
Feb 28, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating for carrier storage or field stop, two metal electrodes, and isolating dielectrics. Each MOS structure includes: a body region, a heavily doped source region, a body contact region, and a gate structure. Each gate structure includes: a gate dielectric and a gate conductive material. The two MOS structures are symmetrically disposed on the top surface and the back surface of the substrate drift layer. The heavily doped source region and the body contact region are disposed in the body region and independent from each other, and both surfaces of the heavily doped source region and the body contact region are connected to each of the two metal electrodes. The gate dielectric separates the gate conductive material from a channel region of each of the MOS structures.
First Claim
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age
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