Photosensitive imaging devices and associated methods
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United States of America Patent
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Aug 22, 2017
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app pub date -
Apr 4, 2014
filing date -
Apr 21, 2010
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Abstract
A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.
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