High-frequency integrated device with an enhanced inductance and a process thereof
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United States of America Patent
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Aug 22, 2017
Grant Date -
Oct 8, 2015
app pub date -
Oct 30, 2013
filing date -
Nov 1, 2012
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Abstract
The present invention provides a high-frequency integrated device, comprising a substrate including at least an on-chip active and passive member and a ferrite layer bonded to the substrate through an interfacial bridge and substantially wrapping plurality of surfaces of said at least on-chip active and passive members. The present invention also provides a system incorporating the high-frequency integrated device of the present invention. The present invention further provides a process for the preparation of the high-frequency integrated device.
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