Substrate etching apparatus and substrate analysis method
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United States of America Patent
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Aug 22, 2017
Grant Date -
Dec 10, 2015
app pub date -
Jan 21, 2014
filing date -
Feb 21, 2013
priority date (Note) -
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Abstract
The present invention provides an etching apparatus suitable for etching polysilicon on a substrate or bulk silicon constituting the substrate. The present invention relates to an etching apparatus including a gas-flow adjusting means that allows etching gas to flow from a periphery of a substrate to substantially a center of the substrate, and relates to a technology capable of etching polysilicon or bulk silicon at a uniform thickness on an entire substrate surface. In addition, the gas-flow adjusting means is installed in a vertically movable manner, and an etching speed can be controlled by an adjustment of the gas-flow adjusting means.
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