Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
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United States of America Patent
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Aug 22, 2017
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app pub date -
Oct 12, 2016
filing date -
Mar 15, 2013
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Abstract
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B06B:GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS I....
- B81C:PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE M....
- G01N:INVESTIGATING OR ANALYSING MATERIALS BY DETERMININ....
- H04R:LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR ....
- B81B:MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-ME....
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